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jmnic product specification silicon npn power transistors 2SC4981 description ? with ito-220 package ? switching power transistor ? low collector saturation voltage pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a i cm collector current-peak 14 a i b base current 1.5 a i bm base current-peak 2 a p t total power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 5.0 ?? /w fig.1 simplified outline (ito-220) and symbol
jmnic product specification 2 silicon npn power transistors 2SC4981 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ;i b =0 80 v v cesat collector-emitter saturation voltage i c =3.5a; i b =0.2a 0.3 v v besat base-emitter saturation voltage i c =3.5a; i b =0.2a 1.2 v i cbo collector cut-off current i ceo collector cut-off current at rated volatge 0.1 ma i ebo emitter cut-off current at rated volatge 0.1 ma h fe dc current gain i c =3.5a ; v ce =2v 70 f t transition frequency i c =0.7a ; v ce =10v 50 mhz switching times t on turn-on time 0.3 | s t s storage time 1.5 | s t f fall time i c =3.5a;i b1 =0.35a i b2 =0.35a ,r l =8 |? v bb2 =4v 0.2 | s
jmnic product specification 3 silicon npn power transistors 2SC4981 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.20 mm)

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